Semiconductor device and fabricating method thereof

A method of manufacturing a semiconductor device comprising:

• forming an amorphous film comprising silicon and germanium;
• providing a selected portion of said amorphous film with a material comprising a metal for promoting crystallization of said amorphous film;
• heating said amorphous film provided with said material to crystallize said amorphous film, thereby, forming a crystallized film wherein crystallization proceeds laterally from said selected to a portion;
• removing said material from the crystallized film by gettering.

A method of manufacturing a semiconductor device comprising:

• forming an amorphous film comprising silicon and germanium;
• providing a first portion of said amorphous film with a material comprising a metal for promoting crystallization of said amorphous film;
• providing a second portion of said amorphous film with a gettering material;
• heating said amorphous film provided with said material to crystallize said amorphous film, thereby, forming a crystallized film wherein crystallization proceeds laterally from said first portion and said metal is simultaneously gettered by said second portion.

A method of manufacturing a semiconductor device comprising:

• forming an amorphous film comprising silicon and germanium;
• providing said amorphous film with a material comprising a metal for promoting crystallization of said amorphous film;
• heating said amorphous film provided with said material to crystallize said amorphous film, thereby, forming a crystallized film;
• removing said material from the crystallized film by gettering;
• patterning said crystallized film to form at least one semiconductor island;
• and
• forming a gate electrode adjacent to the semiconductor island with a gate insulating film interposed therebetween.

A method of manufacturing a semiconductor device comprising:

• forming an amorphous film comprising silicon and germanium;
• providing a selected portion of said amorphous film with a material comprising a metal for promoting crystallization of said amorphous film;
• heating said amorphous film provided with said material to crystallize said amorphous film, thereby, forming a crystallized film wherein crystallization proceeds laterally from said selected to a portion;
• removing said material from the crystallized film by gettering;
• patterning said crystallized film to form at least one semiconductor island;
• and
• forming a gate electrode adjacent to the semiconductor island with a gate insulating film interposed therebetween.

A method of manufacturing a semiconductor device comprising:

• forming an amorphous film comprising silicon and germanium;
• providing a first portion of said amorphous film with a material comprising a metal for promoting crystallization of said amorphous film;
• providing a second portion of said amorphous film with a gettering material;
• heating said amorphous film provided with said material to crystallize said amorphous film, thereby, forming a crystallized film wherein crystallization proceeds laterally from said first portion and said metal is simultaneously gettered by said second portion;
• patterning said crystallized film to form at least one semiconductor island;
• and
• forming a gate electrode adjacent to the semiconductor island with a gate insulating film interposed therebetween.