Magnetic storage element, production method and driving method therefor, and memory array

(Amended) A magnetic memory device comprising:

• a magnetoresistive element;
• and
• a first conductive wire and a second conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element,
• wherein the first conductive wire and the second conductive wire are arranged so as to sandwich the magnetoresistive element, an insulator placed between the first conductive wire and the second conductive wire comprises a ferromagnetic insulator, and the ferromagnetic insulator is in contact with the magnetoresistive element.

A magnetic memory device comprising:

• a magnetoresistive element;
• a switching element;
• a first conductive wire and a second conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element;
• and
• a third conductive wire for electrically connecting the magnetoresistive element and the switching element,
• wherein the first conductive wire and the third conductive wire are connected electrically to the magnetoresistive element with the magnetoresistive element sandwiched therebetween so as to supply current flowing through the magnetoresistive element,
• a connection of the third conductive wire to the magnetoresistive element is placed between the magnetoresistive element and the second conductive wire,
• the second conductive wire is insulated electrically from the magnetoresistive element, and
• an angle between a direction of extraction of the third conductive wire from the connection and a direction of drawing of the second conductive wire is 45° or less.

(Amended) A method for manufacturing a magnetic memory device, the magnetic memory device comprising:

• a magnetoresistive element;
• a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element;
• and
• at least one ferromagnetic member through which the magnetic flux passes,
• wherein the at least one ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element, the at least one ferromagnetic member forms a magnetic yoke, the conductive wire is arranged inside the magnetic yoke, and the following relationships are established:
• Ml≦2Lg;
• a) Lw≦5 μm;
• and b) Ly≦1.0 μm, c)
• where Ml is a length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap, Lg is a length of the magnetic gap, Lw is a length of the ferromagnetic member in a direction of drawing of the conductive wire, and Ly is a length of a path traced by the magnetic flux in the ferromagnetic member,
• the method comprising:
• forming the conductive wire having a thickness Tn on an insulator;
• and
• forming a ferromagnetic member along a surface of the conductive wire so that a thickness of the ferromagnetic member at each of side surfaces of the conductive wire is Tf,
• wherein Tf and Tn satisfy the following relationship:
• Tf≦Tn.

A memory array comprising:

• a plurality of magnetoresistive elements arranged in matrix form;
• and
• a plurality of conductive wires for changing resistance values of the magnetoresistive elements,
• wherein the conductive wires extend in a predetermined direction, and the memory array further comprises a group of grounding conductive wires that are arranged between said conductive wires so as to extend in the predetermined direction.

(Amended) A memory array comprising:

• a plurality of magnetoresistive elements arranged in matrix form;
• and
• a plurality of conductive wires for changing resistance values of the magnetoresistive elements,
• wherein at least one conductive wire of the conductive wires is provided with projections that are oriented toward a plane formed by the magnetoresistive elements, and each of the projections is arranged between the magnetoresistive elements.