Thin film magnetic memory device storing program information efficiently and stably

A thin film magnetic memory device, comprising:

• a plurality of memory cells each storing data magnetically;
• and
• a program cell storing program information used for said plurality of memory cells,
• said program cell including
• a plurality of state change portions each having an electric resistance changed in accordance with one of an externally supplied access designation and an applied magnetic field, and
• at least one access element each connecting corresponding two of said state change portions in series with each other to a node to which a data read current is supplied at the time of data read.

A thin film magnetic memory device, comprising:

• a plurality of memory cells each storing data magnetically;
• and
• a program cell storing program information used for said plurality of memory cells,
• said program cell including
• a plurality of state change portions each having an electric resistance changed in accordance with one of an externally supplied access designation and an applied magnetic field, and
• a plurality of access elements provided corresponding to said plurality of state change portions, respectively, and each controlling electrical connection of the corresponding state change portion with one of a fixed voltage and a prescribed voltage,
• said plurality of state change portions being provided corresponding to respective pieces of program data constituting said program information, and
• said plurality of state change portions being set to electric resistance values independently from each other.