Loading patent…
OwnerMasahiro Nagasu, Hideo Kobayashi +4inventors
InventorsMasahiro Nagasu, Hideo Kobayashi, Hideki Miyazaki, Shin Kimura, Junichi Sakano, Mutsuhiro Mori
Estimating the term…
A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.
A semiconductor circuit comprising a circuit including at least a semiconductor device and an inductance connected to said circuit wherein a flowing current is controlled to flowing and cut-off states,
A semiconductor circuit including at least a semiconductor device,
A semiconductor circuit comprising a circuit including at least a semiconductor device and a semiconductor switching device interposed in parallel between terminals of said circuit wherein, for values of a blocking-direction voltage applied to said terminals of said circuit equal to or greater than a first voltage value but equal to or smaller than a second voltage value, the magnitude of a current increases with an increase in said blocking-direction voltage and, for values of said blocking-direction voltage equal to or greater than said second voltage value, said current rises at a rate of increase greater than a rate of increase for values of said blocking-direction voltage equal to or greater than said first voltage value but equal to or smaller than said second voltage value.
A method of driving a semiconductor circuit including a semiconductor switching device comprising supplying a control signal to said semiconductor switching device in accordance with a blocking-direction voltage applied to main terminals of said semiconductor switching device in such a way that, for values of said blocking-direction voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, the magnitude of a main current increases with an increase in said blocking-direction voltage and, for values of said blocking-direction voltage equal to or greater than said second voltage value, said main current rises at a rate of increase greater than a rate of increase for values of said blocking-direction voltage equal to or greater than said first voltage value but equal to or smaller than said second voltage value.
A semiconductor device comprising a pair of main terminals wherein, for values of a blocking-direction voltage applied to said main terminals equal to or greater than a first voltage value but equal to or smaller than a second voltage value, the magnitude of a main current increases with an increase in said blocking-direction voltage and, for values of said blocking-direction voltage equal to or greater than said second voltage value, said main current rises at a rate of increase greater than a rate of increase for values of said blocking-direction voltage equal to or greater than said first voltage value but equal to or smaller than said second voltage value.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A diode comprising:
A diode comprising:
Dependencies are inferred from the claim text.