Methods and apparatus for forming a film on a substrate
OwnerJohn MacNeil, Robert John Wilby +1inventors
InventorsJohn MacNeil, Robert John Wilby, Knut Beekman
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Abstract
This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k≦3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
Claims16
A semiconductor device including a dual damascene structure formed in a dielectric stack, the stack comprising an upper layer having a first formation etched therein, an intermediate etch stop layer and a lower layer having a second formation etched therein, the second formation being contiguous with the first through the etch stop layer, each of the layers having a dielectric constant k≦3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer.
A method of forming a low k film on a substrate comprising:
- (a) positioning the substrate on a support in a chamber.
- (b) supplying to the chamber in gaseous or vapour from a silicon-containing organic compound and nitrogen in the presence of a plasma to deposit a nitrogen-doped silicon carbide film on the substrate.
A method as claimed in claim 5 where the nitrogen-doped silicon carbide is deposited by a plasma driven at frequencies below 4 mHz.
An etch stop layer comprising nitrogen doped silicon carbide.
A stack of dielectric layers when in each layer is formed of a different material, the materials having detectably different etch characteristics but generally equal dielectric constants.
A method of forming a dual damascene structure including depositing a layer of first insulating material having a first etch rate on a semiconductor wafer, part etching one or more vias in the first layer, subsequentially depositing a layer of second insulating material onto the first so that the part etched via is filled with the second material causing a corresponding formation to appear at the surface of the second layer, etching the second layer a channel to receive a wiring line such that the channel contains the corresponding formation, the relative etch rates of the materials being such that when the channel is etched to the surface of the first layer, the via is fully etched through the first layer.
A method of forming a low k etch stop layer comprising depositing carbon-doped Si02 by a plasma based reaction at a frequency below 4 mHz and depositing a nitrogen-doped SiC by a plasma based reaction onto the SiO2 material at a frequency below 4 mHz.
Dependencies are inferred from the claim text.