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AssigneeFairchild Semiconductor Corporation
InventorsThomas E. Grebs, Christopher B. Kocon, Rodney S. Ridley SR., Gary M. Dolny, Nathan Lawrence Kraft, Louise E. Skurkey
Estimating the term…
In a power semiconductor device 10, a continuous trench has an outer circumferential portion 58 that includes a field plate and inner portions 28 that carry include one or more gate runners 34 to that the gate runners and the field plate are integral with each other. The trench structure 58, 28 is simpler to form and takes up less surface space that the separate structures of the prior art. The trench is lined with an insulator and further filled with conductive polysilicon and a top insulator.
A switchable semiconductor power device of the type which controls current conduction based on field effect principles, comprising:
A semiconductor structure comprising:
A method for manufacturing a semiconductor device, comprising:
A method for operating a semiconductor device comprising:
A semiconductor structure comprising:
The semiconductor of claim 22. wherein the conductor material comprises conductive polysilicon.
The semiconductor of claim 21 further comprising a layer of metal on the conductive polysilicon.
The semiconductor of claim 24 further comprising a second layer of insulator over the polysilicon to cover the walls of the polysilicon in the annular trench and to cover the tops of the runner trenches.
Dependencies are inferred from the claim text.