Radiation-emitting semiconductor chip and light-emitting diode
AssigneeOSRAM GmbH
InventorsJohannes Baur, Eisert Dominik, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Volki, Ulrich Zehnder
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Abstract
Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.
Claims18
A radiation-emitting semiconductor chip comprising an active layer (2) that includes a region emitting electromagnetic radiation, and a substrate (3) which is transparent to the radiation and on which said active layer is arranged, said semiconductor chip having transverse sides (9) and longitudinal sides (6) that delimit it in the directions of extent of said active region and through which at least a portion of the radiation is extracted,
- characterized in that
- at least one longitudinal side (6), serving as the extraction surface, is longer in the direction of extent of said active region than a transverse side (9).
Dependencies are inferred from the claim text.