Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

A semiconductor light emitting device comprising:

• an active layer made of a first nitride III-V compound semiconductor containing In and Ga;
• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• a cap layer in contact with the intermediate layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• and
• a p-type clad layer on the cap layer.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• a cap layer in contact with the intermediate layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer on the cap layer, comprising:
• growing the intermediate layer while raising the growth temperature after growing the active layer.

A semiconductor light emitting device comprising:

• an active layer made of a first nitride III-V compound semiconductor containing In and Ga;
• an optical guide layer in contact with the active layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the intermediate layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• and
• a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor.

A semiconductor light emitting device comprising:an

• active layer made of a first nitride III-V compound semiconductor containing In and Ga;
• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• an optical guide layer in contact with the intermediate layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• and
• a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an optical guide layer in contact with the active layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the optical guide layer and the cap layer in a carrier gas atmosphere containing substantially no hydrogen and containing nitrogen as the major component thereof;
• and
• growing the p-type clad layer in a carrier gas atmosphere containing nitrogen and hydrogen as major components thereof.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an optical guide layer in contact with the active layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the optical guide layer and the cap layer at a growth temperature lower than the growth temperature of the p-type clad layer.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• an optical guide layer in contact with the intermediate layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the intermediate layer, the optical guide layer and the cap layer in a carrier gas atmosphere containing substantially no hydrogen and containing nitrogen as the major component thereof;
• and
• growing the p-type clad layer in a carrier gas atmosphere containing nitrogen and hydrogen as major components thereof.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• an optical guide layer in contact with the intermediate layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the intermediate layer, the optical guide layer and the cap layer at a growth temperature lower than the growth temperature of the p-type clad layer.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• a first optical guide layer in contact with the active layer and made of an eighth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the first optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• a second optical guide layer in contact with the cap layer and made of a ninth nitride III-V compound semiconductor containing Ga;
• and a p-type clad layer in contact with the second optical guide layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the first optical guide layer and the cap layer in a carrier gas atmosphere containing substantially no hydrogen and containing nitrogen as the major component thereof;
• and
• growing the second optical guide layer and the p-type clad layer in a carrier gas atmosphere containing nitrogen and hydrogen as major components thereof.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• a first optical guide layer in contact with the active layer and made of an eighth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the first optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• a second optical guide layer in contact with the cap layer and made of a ninth nitride III-V compound semiconductor containing Ga;
• and a p-type clad layer in contact with the second optical guide layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the first optical guide layer and the cap layer at a growth temperature lower than the growth temperature of the second optical guide layer and the p-type clad layer.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• a first optical guide layer in contact with the intermediate layer and made of an eighth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the first optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• a second optical guide layer in contact with the cap layer and made of a ninth nitride III-V compound semiconductor containing Ga;
• and a p-type clad layer in contact with the second optical guide layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the intermediate layer, the first optical guide layer and the cap layer in a carrier gas atmosphere containing substantially no hydrogen and containing nitrogen as the major component thereof;
• and
• growing the second optical guide layer and the p-type clad layer in a carrier gas atmosphere containing nitrogen and hydrogen as major components thereof.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• a first optical guide layer in contact with the intermediate layer and made of an eighth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the first optical guide layer and made of a third nitride III-V compound semiconductor containing Al and Ga;
• a second optical guide layer in contact with the cap layer and made of a ninth nitride III-V compound semiconductor containing Ga;
• and a p-type clad layer in contact with the second optical guide layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the intermediate layer, the first optical guide layer and the cap layer at a growth temperature lower than the growth temperature of the second optical guide layer and the p-type clad layer.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• a first optical guide layer in contact with the active layer and made of an eighth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the first optical guide layer and having a superlattice structure in which barrier layers are made of a third nitride III-V compound semiconductor containing Al and Ga;
• a second optical guide layer in contact with the cap layer and made of a ninth nitride III-V compound semiconductor containing Ga;
• and a p-type clad layer in contact with the second optical guide layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the first optical guide layer and the cap layer in a carrier gas atmosphere containing substantially no hydrogen and containing nitrogen as the major component thereof;
• and
• growing the second optical guide layer and the p-type clad layer in a carrier gas atmosphere containing nitrogen and hydrogen as major components thereof.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• a first optical guide layer in contact with the active layer and made of an eighth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the first optical guide layer and having a superlattice structure in which barrier layers are made of a third nitride III-V compound semiconductor containing Al and Ga;
• a second optical guide layer in contact with the cap layer and made of a ninth nitride III-V compound semiconductor containing Ga;
• and a p-type clad layer in contact with the second optical guide layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the first optical guide layer and the cap layer at a growth temperature lower than the growth temperature of the second optical guide layer and the p-type clad layer.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• a first optical guide layer in contact with the intermediate layer and made of an eighth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the first optical guide layer and having a superlattice structure in which barrier layers are made of a third nitride III-V compound semiconductor containing Al and Ga;
• a second optical guide layer in contact with the cap layer and made of a ninth nitride III-V compound semiconductor containing Ga;
• and a p-type clad layer in contact with the second optical guide layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the intermediate layer, the first optical guide layer and the cap layer in a carrier gas atmosphere containing substantially no hydrogen and containing nitrogen as the major component thereof;
• and
• growing the second optical guide layer and the p-type clad layer in a carrier gas atmosphere containing nitrogen and hydrogen as major components thereof.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• a first optical guide layer in contact with the intermediate layer and made of an eighth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the first optical guide layer and having a superlattice structure in which barrier layers are made of a third nitride III-V compound semiconductor containing Al and Ga;
• a second optical guide layer in contact with the cap layer and made of a ninth nitride III-V compound semiconductor containing Ga;
• and a p-type clad layer in contact with the second optical guide layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the intermediate layer, the first optical guide layer and the cap layer at a growth temperature lower than the growth temperature of the second optical guide layer and the p-type clad layer.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an optical guide layer in contact with the active layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and having a superlattice structure in which barrier layers are made of a third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the optical guide layer and the cap layer in a carrier gas atmosphere containing substantially no hydrogen and containing nitrogen as the major component thereof;
• and
• growing the p-type clad layer in a carrier gas atmosphere containing nitrogen and hydrogen as major components thereof.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an optical guide layer in contact with the active layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and having a superlattice structure in which barrier layers are made of a third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the optical guide layer and the cap layer at a growth temperature lower than the growth temperature of the p-type clad layer.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• an optical guide layer in contact with the intermediate layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and having a superlattice structure in which barrier layers are made of the third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the intermediate layer, the optical guide layer and the cap layer in a carrier gas atmosphere containing substantially no hydrogen and containing nitrogen as the major component thereof;
• and
• growing the p-type clad layer in a carrier gas atmosphere containing nitrogen and hydrogen as major components thereof.

A manufacturing method of a semiconductor light emitting device including an active layer made of a first nitride III-V compound semiconductor containing In and Ga;

• an intermediate layer in contact with the active layer and made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor;
• an optical guide layer in contact with the intermediate layer and made of a sixth nitride III-V compound semiconductor containing Ga;
• a cap layer in contact with the optical guide layer and having a superlattice structure in which barrier layers are made of the third nitride III-V compound semiconductor containing Al and Ga;
• and a p-type clad layer in contact with the cap layer and made of a seventh nitride III-V compound semiconductor containing Al and Ga and different from the third nitride III-V compound semiconductor, comprising:
• growing the active layer, the intermediate layer, the optical guide layer and the cap layer at a growth temperature lower than the growth temperature of the p-type clad layer.