System and method for heating and cooling wafer at accelerated rates
AssigneeSensArray Corporation
InventorWayne Glenn Renken
Life of this patent
Estimating the term…
Abstract
A highly dynamic heating and/or chilling chamber for processing semiconductor wafers. The chamber has uniform heat and gas flow distribution in order to minimize the temperature gradient at different points of the wafer.
Claims29
A system for varying the temperature of a wafer comprising:
- a first temperature controlled plate;
- a second temperature controlled plate comprising proximity pins, the wafer located between the first and second temperature controlled plates and distanced from the second temperature controlled plate by the proximity pins;
- and
- an enclosure surrounding the first and second temperature controlled plates and the wafer, the enclosure comprising a gas input and output, the gas flowing from the input past the wafer and to the output.
A device for controlling the temperature of a wafer comprising:
- a temperature control element;
- and
- a gas distribution system configured to distribute gas at different points about a surface of the wafer, the gas distribution system comprising a plurality of flow paths, each of the plurality of flow paths comprising a laminar flow element,
- wherein the wafer is located between the gas distribution system and the temperature control element.
A method of conditioning a wafer having a first and a second side within a chamber, the method comprising:
- heating or cooling the wafer from the first side;
- heating or cooling the wafer from the second side;
- applying gas to the first side of the wafer, the gas distributed through a plurality of passages such that the gas flow is substantially laminar.
A post exposure bake chamber comprising:
- a first heating plate;
- a second heating plate;
- the first and second heating plates configured to heat a wafer placed between the plates, the wafer spaced from the first and second heating plates by proximity pins.
A wafer conditioning chamber comprising:
- a first means for changing the temperature of the wafer at a first side of the wafer;
- a second means for changing the temperature of the wafer at a second side of the wafer;
- and
- a gas distribution means for distributing a gas at a controlled flow rate at a plurality of locations upon the first or second side of the wafer.
A system for varying the temperature of a wafer comprising:
- a first temperature altering device;
- a second temperature altering device, the wafer located between the first and second temperature altering devices;
- and
- an enclosure surrounding the first and second temperature altering devices and the wafer, the enclosure comprising a gas input and output, the gas flowing from the input past the wafer and to the output,
- the system operable to vary a rate of closure of any of the first or second temperature altering devices or the enclosure to adjust the temperature of the wafer.
A device for controlling the temperature of a wafer within an enclosure having a first and second enclosing structures, the device comprising:
- a temperature control element;
- and
- a gas distribution system configured to distribute gas at different points about a surface of the wafer, the gas distribution system comprising a plurality of flow paths, and a laminar flow element,
- wherein the wafer is located between the gas distribution system and the temperature control element, and
- wherein the device is operable to adjust the rate of opening and closure of the enclosure by varying one or more rates of movement of the first or second enclosing structures.
Dependencies are inferred from the claim text.