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OwnerPaul Frans Marie Colson, Sylvie Boonen +5inventors
InventorsPaul Frans Marie Colson, Sylvie Boonen, Eddy De Backer, Freddy Marcel Yvan De Pestel, Peter Dominique Willem Moens, Marnix Roger Anna Tack, Davy Fabien Michel Villanueva
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A method for processing a low ohmic contact structure to a buried conductive layer in or below a device layer forming part of a semiconductor component is presented, whereby first a highly doped region within said device layer reaching said buried conductive layer is realised, this being followed by a step of etching a trench through said highly doped region to a final depth which extends at least to the semiconductor substrate underneath said buried conductive layer. In a variant method this trench is first pre-etched until a predetermined depth, before the highly doped region is provided. A semiconductor structure which is realised by these methods is described as well.
Method for processing a low ohmic contact structure to a buried conductive layer in or below a device layer forming part of a semiconductor component, said method comprising providing a highly doped region within said device layer reaching said buried conductive layer
Semiconductor structure including a trench in a device layer on top of a buried layer, said trench extending at least through said buried layer to a semiconductor substrate beneath said buried layer, said trench being surrounded by a doped region which vertically extends at least to the upper edge of said buried layer and which has a doping concentration which is higher and of opposite type than the doping concentration of said device layer.
Dependencies are inferred from the claim text.