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AssigneeFujitsu Limited
InventorsTakeshi Shioga, Kazuaki Karasawa, Kazuaki Kurihara
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A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.
A capacitor comprising a first conducting film formed on a substrate, a first dielectric film formed on the first conducting film, a second conducting film formed on the first dielectric film, a second dielectric film formed above the second conducting film, covering an edge of the second conducting film, and a third conducting film formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film,
A semiconductor device comprising a capacitor, the capacitor comprising a first conducting film formed on a substrate, a first dielectric film formed on the first conducting film, a second conducting film formed on the first dielectric film, a second dielectric film formed above the second conducting film, covering an edge of the second conducting film, and a third conducting film formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film,
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising a semiconductor element substrate, and a passive component mounted on the semiconductor element substrate and electrically connected to electrodes of the semiconductor element substrate,
A semiconductor device comprising a semiconductor element substrate, and a passive component including a passive element mounted on the semiconductor element substrate and electrically connected to electrodes of the semiconductor element substrate,
A method for fabricating a semiconductor device comprising the steps of:
A method for fabricating a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.