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AssigneesInfineon Technologies AG, International Business Machines Corporation
InventorsYun Yu Wang, Johnathan Faltermeier, Colleen M. Snavely, Michael Maldei, Michael M. Iwatake, David M. Dobuzinsky, Ravikumar Ramachandran, Viraj Y. Sardesai, Philip L. Flaitz, Lisa Y. Ninomiya
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In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where in amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising: a) affecting a CB liner reactive ion etch on a substrate to remove SiN and SiO; b) affecting an O plasma clean (in-situ or ex-situ); c) affecting a Huang AB clean; d) affecting a dilute hydrofluoric acid (DHF) clean; e) depositing amorphous Si; and f) annealing to recrystallize and regrow amorphous CB.
In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and wherein amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising:
In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and wherein amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising:
Dependencies are inferred from the claim text.