Semiconductor constructions and methods of forming semiconductor constructions

A method of forming a semiconductor construction, comprising:

• forming a block comprising at least one magnetic composition over a semiconductor substrate;
• forming first, second and third layers over the block, and over a region of the substrate proximate the block;
• removing the second and third layers from over the block while leaving portions of the second and third layers over the region proximate the block;
• at least some of the second layer being removed from under the third layer to leaving a channel over the region proximate the block;
• and
• forming a magnetic material within the channel.

A method of forming a magnetoresistive memory device, comprising:

• forming a memory bit comprising a stack which includes a first magnetic mass, a second magnetic mass, and a non-magnetic mass between the first and second magnetic masses;
• forming first, second and third layers over the memory bit, and over a region proximate the memory bit;
• removing the second and third layers from over the memory bit, while leaving portions of the second and third layers over the region proximate the memory bit;
• at least some of the second layer being removed from under the third layer to leaving a channel over the region proximate the memory bit;
• and
• forming a magnetic material within the channel.

A method of forming a magnetoresistive memory device, comprising:

• forming a memory bit comprising a stack which includes a first magnetic mass, a second magnetic mass, and a non-magnetic mass between the first and second magnetic masses;
• forming first, second and third layers over the memory bit, and over a region proximate the memory bit;
• removing the second and third layers from over the memory bit, while leaving portions of the second and third layers over the region proximate the memory bit;
• etching the second layer with an etch selective for the second layer relative to the third layer to remove at least some of the second layer from under the third layer and thereby form a channel over the region proximate the memory bit;
• forming a first material within the channel to only partially fill the channel;
• and
• forming a second material within the partially-filled channel, the second material being a magnetic material.

A magnetoresistive memory construction, comprising:

• a substrate;
• a memory bit supported by the substrate and comprising a stack which includes a first magnetic mass, a second magnetic mass, and a non-magnetic mass between the first and second magnetic masses;
• first, second and third layers over a region of the substrate proximate the memory bit, the second layer being recessed relative to the first and third layers to define a channel proximate the memory bit;
• and
• a magnetic material within the channel.

A magnetoresistive memory construction, comprising:

• a substrate;
• a memory bit supported by the substrate and comprising a stack which includes a first magnetic mass, a second magnetic mass, and a non-magnetic mass between the first and second magnetic masses;
• first, second and third layers over a region of the substrate proximate the memory bit, the second layer being recessed relative to the first and third layers to define a channel proximate the memory bit;
• a first material within the channel and only partially filling the channel;
• and
• a second material within the partially-filled channel, the second material being different in composition from the first material and being a magnetic material.