Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material

A method of forming a capacitor of a semiconductor device, comprising:

• forming a lower electrode of the capacitor on a substrate;
• forming a dielectric layer of the capacitor including titanium tantalum oxide on the substrate by discontinuously introducing a first reacting material, a second reacting material, and a purge gas onto the lower electrode, chemisorbing a portion of the first reacting material and the second reacting material onto the substrate, and purging at least some non-chemisorbed first and second reacting materials from the substrate, wherein the first reacting material includes a tantalum precursor and a titanium precursor, and the second reacting material includes oxygen;
• and
• forming an upper electrode of the capacitor on the dielectric layer.

A method of forming a transistor, comprising:

• forming a gate dielectric layer of the transistor including tantalum titanium oxide on a substrate by discontinuously introducing a first reacting material, a second reacting material, and a purge gas onto the substrate, chemisorbing a portion of the first reacting material and the second reacting material onto the substrate, and purging at least some non-chemisorbed first and second reacting materials from the substrate, wherein the first reacting material includes a tantalum precursor and a titanium precursor and the second reacting material includes oxygen;
• forming a gate electrode on the gate dielectric layer;
• and
• forming source and drain regions in the substrate.

A method of forming an atomic layer of a material on a substrate, comprising:

• introducing a first precursor of the material to the substrate such that a first portion of the first precursor is chemisorbed onto the substrate and a second portion of the first precursor is not chemisorbed onto the substrate;
• purging at least some of the second portion of the first precursor that is not chemisorbed onto the substrate;
• introducing a second precursor of the material to the substrate such that a first portion of the second precursor is chemisorbed onto the substrate and reacts with the first portion of the first precursor that is chemisorbed onto the substrate to form the atomic layer of the material, and a second portion of the second precursor is not chemisorbed onto the substrate;
• and
• purging at least some of the second portion of the second precursor that is not chemisorbed onto the substrate.

A method of forming an atomic layer of a material on a substrate, comprising:

• introducing a first precursor of the material onto the substrate in a purge gas flow;
• then
• discontinuing the introducing the first precursor while maintaining the purge gas flow;
• then
• introducing a second precursor of the material onto the substrate in the purge gas flow;
• and then
• discontinuing the introducing the second precursor while maintaining the purge gas flow.