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AssigneeThe Australian National University
InventorsManuela Buda, Hark Hoe Tan, Lan Fu, Lalita Josyula, Michael Francis Aggett, Chennupati Jagadish
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A single-mode optical device, including a first region, and a second region laterally disposed about the first region, and including an absorbing layer and an isolation layer between the absorbing layer and the first region, wherein the thickness of the isolation layer is selected to control optical loss from the first region to the absorbing layer in the second region and thereby to attenuate one or more high order lateral optical modes of the device. The one or more high order lateral optical modes are attenuated relative to the fundamental lateral mode to provide the device with a high kink power. The device can be a 980 nm ridge diode laser where the thickness of an oxide insulating layer around the ridge is selected to control optical losses into a gold contact layer and thereby attenuate the first order lateral mode, providing the laser with a kink power of at least about 250 mW.
A single-mode optical device, including a first region, and a second region laterally disposed about said first region, said second region including an absorbing layer and an isolation layer between said absorbing layer and said first region, wherein the thickness of said isolation layer is selected to control optical loss from said first region to said absorbing layer in said second region and thereby to attenuate one or more higher order lateral optical modes of said device relative to the fundamental lateral optical mode of said device.
Dependencies are inferred from the claim text.