Semiconductor switching circuit device
AssigneeSanyo Electric Co., Ltd.
InventorsTetsuro Asano, Mikito Sakakibara
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AssigneeSanyo Electric Co., Ltd.
InventorsTetsuro Asano, Mikito Sakakibara
Estimating the term…
A semiconductor switching circuit device includes a field effect transistor having a source electrode, a gate electrode and a drain electrode, a first electrode pad connected to the source electrode or the drain electrode, and a second electrode pad connected to the source electrode or the drain electrode which is not connected to the first electrode pad. The device also includes a third electrode pad receiving a DC voltage and applying the DC voltage to the field effect transistor, a first insulating layer covering the field effect transistor, a metal layer disposed above the first insulating layer and connected to the third electrode pad, and a second insulating layer disposed on the metal layer. The third electrode pad may be a control terminal pad, a ground terminal pad or a terminal pad receiving a constant DC power voltage. The metal layer may be a flat sheet, a lattice or a comb-like structure.
A semiconductor switching circuit device comprising:
A semiconductor switching circuit device for switching high frequency signals in response to a control signal, comprising:
A semiconductor switching circuit device comprising:
Dependencies are inferred from the claim text.