Programming transistor in breakdown mode with current compliance

A programmable fuse apparatus, comprising:

• a programmable fuse structure including a fuse and a transistor having a gate and drain and source, said transistor coupled to said fuse such that said drain and said source are selectively connectable in series with said fuse;
• and
• a programming device coupled to said fuse structure and cooperable with said transistor for producing in said fuse a current of sufficient magnitude to produce an increase in electrical resistance in said fuse, said programming device adapted to operate said transistor in its breakdown region and limit said current to a magnitude that has been determined to be insufficient to damage said transistor.

An electrical programming system, comprising:

• a plurality of programmable fuse structures coupled at a common node each including a fuse and a transistor having a gate and drain and source, said transistor coupled to said fuse such that said drain and said source are connectable in series with said fuse;
• and
• a programming device coupled to each of said fuse structures and adapted to effectuate a current of sufficient magnitude to produce an increase in electrical resistance selectively to the fuse of one of said fuse structures, said programming device further adapted to operate said transistors in their breakdown region and limit said current to a magnitude that has been determined to be insufficient to damage said transistors.