Schottky structure in GaAs semiconductor device
AssigneeNational Chiao Tung University
InventorsCheng-Shih Lee, Yi Chang
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Abstract
The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.
Claims8
1 A Schottky Structure in GaAs semiconductor device, which comprises:
- a gallium arsenide (GaAs) semiconductor substrate;
- a titanium (Ti) layer, on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact;
- a diffusion barrier layer, on a surface of said titanium (Ti) layer to block metal diffusion;
- and
- a first copper layer, on a surface of said diffusion barrier layer wherein copper process on a surface of said first copper layer by diffusion barrier layer to block metal diffusion.
2 The Schottky Structure of claim 1, wherein said titanium (Ti) layer substantially has a specific thickness between 50 nm to 100 nm.
3 The Schottky Structure of claim 1, wherein said titanium (Ti) layer is deposited on a gallium arsenide (GaAs) semiconductor substrate by sputtering or evaporation.
4 The Schottky Structure of claim 1, wherein said diffusion barrier layer is comprised of a refractory material at least one selected from a group consisting of Tungsten (W), tungsten nitride (WN), cobalt (Co), tantalum (Ta), tantalum nitride (TaN) and molybdenum (Mo).
5 The Schottky Structure of claim 1, wherein said diffusion barrier layer is deposited on said titanium (Ti) layer by sputtering or evaporation.
6 The Schottky Structure of claim 1, wherein said diffusion barrier layer substantially has a specific thickness between 30 nm to 100 nm.
7 The Schottky Structure of claim 1, wherein first copper layer substantially has a specific thickness between 200 nm to 500 nm,
8 The Schottky Structure of claim 1, wherein said first copper layer is deposited on said diffusion barrier layer by sputtering or evaporation