Semiconductor acceleration sensor using doped semiconductor layer as wiring

Abstract

A semiconductor acceleration sensor is provided, which has the capability of preventing a situation that detection accuracy of acceleration deteriorates due to undesirable thermal stress induced when a metal layer wiring is used in the acceleration sensor. This sensor comprises a frame, a weight, at least one pair of beams made of a semiconductor material, via which said weight is supported in the frame, and at least one resistor element formed on each of the beams to thereby detect acceleration according to piezoelectric effect of the resistor element. The sensor also includes a doped semiconductor layer formed in a top surface of each of the beams as a wiring for electrically connecting with the resistor element.

Dependencies are inferred from the claim text.