Silicon on isulator (SOI) transistor and methods of fabrication
OwnerMark Bohrinventor
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Abstract
The present invention is a silicon on insulator (SOI) transistor and its method of fabrication. According to the present invention, an opening is formed in the insulating layer formed on a single crystalline silicon substrate. An amorphous or polycrystalline silicon or silicon alloy is then formed in the opening on the single crystalline silicon substrate and on the insulating layer. The amorphous or polycrystalline silicon or silicon alloy in the opening and at least a portion of the amorphous or polycrystalline silicon or silicon alloy on the insulating layer is crystallized into a single crystalline silicon or silicon alloy film.
Claims34
A semiconductor device comprising:
- a silicon or silicon alloy film formed on an insulating layer formed on a single crystalline silicon substrate, said silicon film having a single crystalline silicon or silicon alloy portion;
- a gate dielectric on said single crystalline silicon portion of said silicon film;
- a gate electrode on said gate dielectric;
- a source and a drain region formed on opposite sides of said gate electrode in said silicon or silicon alloy film;
- and
- a single crystalline silicon or silicon alloy window portion extending from said single crystalline silicon substrate through an opening in said insulating layer to said single crystalline silicon or silicon alloy portion of said silicon film.
A semiconductor device comprising:
- a silicon or silicon alloy film formed on an insulating layer formed on a single crystalline silicon substrate, said silicon or silicon alloy film having a single crystalline silicon or silicon alloy portion having a thickness of less than or equal to 30 nanometers;
- a gate dielectric on said single crystalline silicon or silicon alloy portion of said silicon or silicon alloy film;
- a gate electrode on said gate dielectric;
- and
- a source region and a drain region in said silicon or silicon alloy film on opposite sides of said gate electrode.
A semiconductor device comprising:
- a silicon or silicon alloy film formed on an insulating layer formed on a single crystalline silicon substrate, said silicon or silicon alloy film having a single crystalline silicon or silicon alloy portion and an amorphous or polycrystalline portion;
- a gate dielectric on said single crystalline silicon or silicon alloy portion;
- a gate electrode on said gate dielectric;
- and
- a source and a drain region in said silicon or silicon alloy film on opposite sides of said gate electrode.
A method of forming a semiconductor device comprising:
- forming an opening in an insulating layer formed on a single crystalline silicon substrate;
- forming an amorphous or polycrystalline silicon or silicon alloy layer in said opening on said single crystalline silicon substrate and on said insulating layer;
- and
- crystallizing said amorphous or polycrystalline silicon or silicon alloy film in said opening and a least a portion of said amorphous or polycrystalline silicon or silicon alloy film formed on said insulating layer into a single crystalline silicon or silicon alloy film.
A method of forming a semiconductor device comprising:
- forming a polish stop layer on a insulating layer formed on a single crystalline silicon substrate;
- forming an opening in said polish stop layer;
- forming an opening in said insulating layer within said opening in said polish stop layer;
- forming an amorphous or polycrystalline silicon or silicon alloy film in said opening on said single crystalline silicon substrate in said opening of said insulating layer, on said insulating layer within said opening in said polish stop layer, and on said polish stop layer;
- crystallizing said amorphous or polycrystalline silicon or silicon alloy film in said opening in said insulating layer and at least a portion of said amorphous or polycrystalline silicon or silicon alloy film formed on said insulating layer within said polish stop layer into a single crystalline silicon or silicon alloy film;
- and
- polishing said single crystalline silicon or silicon alloy film on said insulating layer until said single crystalline silicon or silicon alloy film is removed from said polish stop layer and is substantially planar with said polish stop layer.
Dependencies are inferred from the claim text.