Fabrication method for shallow trench isolation
AssigneeMacronix International Co., Ltd.
InventorsSzu-Tsun Ma, Kent Kuohua Chang
Life of this patent
Estimating the term…
Abstract
A method for fabricating a shallow trench isolation structure includes forming a hard mask layer over a substrate. An ion bombardment step is further performed on the surface of the hard mask layer, followed by forming a patterned photoresist layer on the surface of the hard mask layer. Thereafter, the hard mask layer is patterned using the photoresist layer as an etching mask. An etching process is further performed to form a trench in the substrate. The photoresist layer is then removed, followed by filling an insulation layer in the trench. After this, the hard mask is removed to complete the fabrication of a shallow trench isolation region.
Claims20
A method for fabricating a shallow trench isolation region, comprising:
- forming a hard mask layer over a substrate;
- performing an ion bombardment process on a surface of the hard mask layer;
- forming a patterned photoresist layer on the surface of the hard mask layer;
- patterning the hard mask layer using the photoresist layer as an etching mask;
- performing an etching process to form a trench in the substrate;
- removing the photoresist layer;
- filling the trench with an insulation layer;
- and
- removing the hard mask layer to form a shallow trench isolation region.
A fabrication method for a shallow trench isolation structure, comprising:
- forming a hard mask layer over a substrate;
- forming a thin material layer on a surface of the hard mask layer, wherein an interaction between the thin material layer and a photoresist layer is weaker than an interaction between the hard mask layer and the photoresist layer;
- forming a patterned photoresist layer on the thin material layer;
- patterning the hard mask layer using the patterned photoresist layer as an etching mask;
- performing an etching process to form a trench in the substrate;
- removing the photoresist layer;
- filling the trench with an insulation layer;
- and
- removing the hard mask layer to complete a formation of a shallow trench isolation region.
A method for preventing a formation of an island defect, comprising:
- forming a hard mask layer over a substrate;
- performing a treatment step on a surface of the hard mask layer to weaken an interaction between the hard mask layer and a photoresist material;
- forming a patterned photoresist layer on the hard mask layer;
- and
- patterning the substrate to form an opening in the substrate, using the patterned photoresist layer as an etching mask.
Dependencies are inferred from the claim text.