Method of manufacturing thin film transistor
AssigneesNEC LCD Technologies, Ltd., NEC Corporation
InventorsHiroshi Okumura, Kunihiro Shiota
Life of this patent
Estimating the term…
Abstract
After a polysilicon semiconductor film 5 and a first gate oxide film 6 are formed on a transparent insulating substrate 1, the semiconductor film 5 and the first gate oxide film 6 are patterned into an island shape to form an island part. At this time, an overhang part 8 of a visor shape is formed where side end surfaces of the first gate oxide film 6 and the semiconductor film 5 are not aligned and an end part of the first gate oxide film 6 projects slightly from a position of a side end surface of the semiconductor film 5. The overhang part 8 is removed, for example, during cleaning, which thus enhances yield.
Claims18
A method of manufacturing a thin film transistor, comprising the steps of:
- forming a first insulating film on a semiconductor film formed on a substrate;
- forming an island by patterning the semiconductor film and the first insulating film into island shape;
- forming a second insulating film on the island;
- forming a gate electrode on the second insulating film;
- and
- removing an overhang part where a side end part of the first insulating film making the island is formed into a visor shape over a side end part of the semiconductor film;
- wherein the step of removing the overhang part is performed after the step of forming the island and before the step of forming the second insulating film.
A method of manufacturing a thin film transistor, comprising the steps of:
- forming a first insulating film on a semiconductor film formed on a substrate;
- forming an island by patterning the semiconductor film and the first insulating film into an island shape;
- cleaning the substrate on which the island is formed;
- forming a second insulating film on the island;
- and a step of forming a gate electrode on the second insulating film,
- wherein the step of cleaning is also performed to remove an overhang part, where a side end part of the first insulating film making the island is formed into a visor shape over a side end part of the semiconductor film.
Dependencies are inferred from the claim text.