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AssigneeAixtron SE
InventorsHolger Jurgensen, Gerhard Karl Strauch, Johannes Kappeler
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The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.
A device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates in a process chamber (1) by means of reaction gases which are introduced into the process chamber where they react pyrolytically, the process chamber (1) being disposed between a first wall (3) and a second wall (4), which lies opposite the first, and the first wall forming at least one heated substrate holder (45) and a gas admission element (6) being associated with the second wall (4), a section (49) of which gas admission element (6) projects as far as approximately into the center between the two walls (3, 4) and by means of which gas admission element (6) at least two reaction gases are fed into the process chamber (1) spatially spaced apart from one another, characterized in that the gas admission element (6) including the section (49) which projects into the space between the two walls (3, 4) can be cooled to a temperature which is lower than the decomposition temperature of the reaction gases, a cooled base surface (52) forming an outlet opening (31) for a reaction gas and running parallel to the surface of the first wall (3).
A method for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates in a process chamber (1) by means of reaction gases which are introduced into the process chamber (1) where they react pyrolytically, the process chamber having a first wall (3) and a second wall (4), which lies opposite the first, and a substrate lying on a heated substrate holder which is associated with the first wall, in which method two reaction gases, which are spatially at a spacing from one another and have been cooled to below their decomposition temperatures, are fed to the process chamber (1), characterized in that the process gases are passed at a cooled temperature into the hot zone of the process chamber (1), the temperature at the location where the two reaction gases meet (51) in the process chamber (1) being higher than the saturation temperature of the decomposition products or possible adducts of the decomposition products.
The device according to one of the preceding claims, characterized in that the gas admission element (6) is water-cooled.
The device according to one of the preceding claims, characterized in that a reaction gas emerges from an annular gap (30) with cooled gap walls which consist of steel and lie directly adjacent to a graphite wall, which can be heated to over 1000° C., preferably over 1500° C., of the process chamber.
The device according to one of the preceding claims, characterized in that the section (49) which projects into the process chamber (1) is frustoconical in shape, the base surface (52) lying approximately centrally, preferably closer to the first wall (3), between the two walls (3, 4).
The device according to one of the preceding claims, characterized by a carrier (33) which is connected to the wall of the gas admission element (6), is made in particular from graphite and forms a bearing shoulder on which an annular, heated cover plate (4) in particular made from graphite rests.
The device according to claim 13, characterized in that the lining rings (34) consist of TaC or of TaC- or SiC-coated graphite.
The device according to one of the preceding claims, characterized in that the back-heated wall (3) forms an annular carrier plate for a plurality of in particular rotatable substrate holders (45).
Dependencies are inferred from the claim text.