Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits

The method of claim 73, wherein the repeating —Si—O—Si—O— backbone is a three dimensional matrix.

A method for making an integrated circuit comprising providing alternating regions of electrically conductive and dielectric materials on a substrate, wherein one of the dielectric materials in the integrated circuit is a hybrid organic-inorganic material comprised of a silicon oxide backbone, organic or hybrid organic-inorganic cross linking groups, and an organic moiety bound to the backbone that is an aryl group or an alkyl group having 1 to 14 carbon atoms, wherein the dielectric material is formed by hydrolyzing a plurality of precursors to form the hybrid organic inorganic material, and depositing the hybrid organic inorganic material on the substrate, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 are each bound to Si and are independently an aromatic, a cross linkable group or any alkyl group having from 1-14 carbons, and wherein R4 is either an alkoxy group, OR5, or a halogen.

A method for making an integrated circuit comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by depositing a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic moiety bound to the backbone selected from an epoxy group, an alkynyl group having from 1 to 10 carbon atoms and an alkenyl group having from 1 to 10 carbon atoms, followed by causing cross linking via the organic moiety by the application of heat, light or particle beam, wherein the dielectric material is formed by hydrolyzing a plurality of precursors to form the hybrid organic inorganic material, and depositing the hybrid organic inorganic material on the substrate, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 and R4 are each bound to Si and at least one of R1, R2, and R3 is selected from an epoxy group, an alkynyl group having from 1 to 10 carbon atoms and an alkenyl group having from 1 to 10 carbon atoms, and wherein R4 is either an alkoxy group, OR5, or a halogen.

A method for making an integrated circuit comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by depositing a hybrid organic inorganic material comprised of a metal oxide or semiconductor oxide backbone and a first organic moiety selected from an aryl group and an alkyl group having from 1 to 12 carbon atoms, and having a second organic moiety selected from an epoxy group, an alkynyl group having from 1 to 10 carbon atoms and an alkenyl group having from 1 to 10 carbon atoms, followed by causing organic cross linking via the second organic moiety by the application of heat, light or particle beam, wherein the dielectric material is formed by hydrolyzing a plurality of precursors to form the hybrid organic inorganic material, and depositing the hybrid organic inorganic material on the substrate, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 and R4 are each bound to Si and R1, R2, and R3 are independently an aryl group, an alkyl group having from 1 to 12 carbon atoms, or a cross linkable group, the cross linkable group selected from an epoxy group, an alkynyl group having from 1 to 10 carbon atoms and an alkenyl group having from 1 to 10 carbon atoms, and wherein R4 is either an alkoxy group (OR5) or a halogen.

A method for forming a hybrid organic inorganic layer on a substrate, comprising:

• hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula:
• R1R2R4MR5, wherein R1, R2 and R4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1, R2 and R4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R5 is either an alkoxy group, OR3, or a halogen (X).