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US 2004/0002222 A1Published application
Low cost method of providing a semiconductor device having a high channel density
AssigneeSemiconductor Components Industries, LLC
InventorPrasad Venkatraman
Life of this patent
Estimating the term…
Abstract
A method of making a semiconductor device 10 by forming a first dielectric layer 140 on a substrate, etching through the first dielectric layer to form a trench 150 having a channel region 135 on a sidewall 160 of the trench, and laterally removing a portion of the first dielectric layer adjacent to the sidewall of the trench above the channel region for defining a source region 280 of the semiconductor device.
Claims20
A method of making a semiconductor device 10, comprising the steps of:
- forming a first dielectric layer 140 on a substrate;
- etching through the first dielectric layer to form a trench 150 having a channel region 135 on a sidewall 160 of the trench;
- and
- laterally removing a portion of the first dielectric layer adjacent to the sidewall of the trench above the channel region for defining a base contact 270 or source region 280 of the semiconductor device.
1 more element
A method of making a transistor 10, comprising:
- etching through a first dielectric layer 140 to form a trench 150 in a semiconductor substrate 100, where a channel region 135 of the transistor is formed along a sidewall 160 of the trench;
- and
- etching the first dielectric layer in a direction 211 perpendicular to the sidewall 65 to leave a masking portion for defining a source region 270 or base contact of the transistor.
A method of making a transistor 10, comprising:
- etching through a first material 140 and a second material nitride to form a trench 150 in a semiconductor substrate 100, where a channel region 135 of the transistor is formed along a sidewall 160 of the trench;
- and
- laterally removing the first material under the second material to mask a source region 270 of the transistor.
Dependencies are inferred from the claim text.