Method for patterning dense and isolated features on semiconductor devices
AssigneeTexas Instruments Incorporated
InventorHoward L. Tigelaar
Life of this patent
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Abstract
According to one embodiment of the invention, a method of forming a semiconductor device is provided. The method includes providing a first mask that defines a densely populated plurality of hole patterns. The first mask overlies a layer of dielectric material. The method also includes defining at least one isolated hole pattern in the first mask by covering one or more of the defined densely populated hole patterns using a second mask. The method also includes forming a plurality of densely populated holes in the dielectric material and at least one isolated hole by etching, according to one or more of the plurality of hole patterns that are not covered by the second mask, the layer of dielectric material.
Claims20
A method of forming a semiconductor device, comprising:
- providing a first mask that defines a densely populated plurality of hole patterns, the first mask overlying a layer of dielectric material;
- defining at least one isolated hole pattern in the first mask by covering one or more of the defined densely populated hole patterns using a second mask;
- and
- forming a plurality of densely populated holes in the dielectric material and at least one isolated hole by etching, according to one or more of the plurality of hole patterns that are not covered by the second mask, the layer of dielectric material.
A method of forming a semiconductor device, comprising:
- defining a densely populated plurality of feature patterns in a layer of photo-resist by exposing the layer of photo-resist to a dense mask pattern of light;
- forming an isolated feature pattern by exposing one or more of the defined densely populated plurality of feature patterns to light;
- and
- forming a plurality of densely populated features and at least one isolated feature by removing the exposed photo-resist and etching an underlying layer of material not covered by the unexposed photo-resist.
A method of forming a semiconductor device, comprising:
- providing a first mask that defines a densely populated plurality of hole patterns in a photo-resist layer overlying a layer of dielectric material;
- hardening the photo-resist layer after providing the first mask;
- defining at least one isolated hole pattern in the hardened photo-resist layer by forming an isolated hole pattern by covering one or more of the defined densely populated hole patterns using a second mask;
- forming a plurality of densely populated holes in the dielectric material and at least one isolated hole by etching, according to one or more of the plurality of hole patterns that are not covered by the second mask, the layer of dielectric material;
- and
- removing the first mask and the second mask from the layer of dielectric material.
Dependencies are inferred from the claim text.