Method for descreasing number of particles during etching process
OwnerChun-Ling Penginventor
Life of this patent
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Abstract
A method for decreasing a number of particles during an etching process of a material layer is described, in which a wafer is put on a susceptor in an etching chamber. A series of etching tests are conducted at first under the same conditions as in the etching process but with various susceptor heights, and the obtained data is analyzed to find an optimum height that results in a minimum deviation of etching depth. A normal etching process is then performed to the wafer with the height of the susceptor being adjusted to the optimum one to improve the uniformity of etching rate.
Claims10
A method for decreasing a number of particles during an etching process of a material layer in which a wafer is put on a susceptor in an etching chamber, comprising:
- setting a height of the susceptor and performing an etching process at such a height;
- measuring deviations of etching depth at different locations under such a height;
- repeating the above two steps with respect to various heights so as to obtain several sets of corresponding data for different heights;
- and
- selecting the height resulting in a minimum deviation of etching depth as a height to perform a normal etching process.
An etching process for etching a material layer on a substrate, comprising:
- loading the substrate on a susceptor in an etching chamber used for the etching process;
- and
- performing the etching process with a height of the susceptor in the etching chamber being adjusted to an optimum height that results in a minimum deviation of etching depth of the material layer in the etching process.
A method for rounding a corner of an opening in a dielectric layer on a substrate, comprising:
- loading the substrate on a susceptor in an etching chamber;
- and
- performing a corner-rounding etching process to round the corner of the opening in the dielectric layer with a height of the substrate in the etching chamber being adjusted to an optimum height that results in a minimum deviation of etching depth of the dielectric layer in the corner-rounding etching process.
Dependencies are inferred from the claim text.