Method for forming amorphous silicon film on single crystal silicon and structure formed
AssigneeIndustrial Technology Research Institute
InventorsPo-Hao Tsai, Nai-Hao Kuo, Wen-Jiun Liu, Yuh-Wen Lee
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Abstract
A method for forming amorphous silicon films with low defect density on single crystal silicon substrates and structures formed. The method is carried out by first providing a single crystal silicon substrate, then depositing a buffer layer by a material such as silicon oxide, silicon nitride, silicon carbide or a metal on top of the single crystal silicon substrate. An amorphous silicon film of substantial thickness, i.e. of thicker than 1 μm, is then deposited on top of the buffer layer achieving a smooth top surface.
Claims20
A method for forming amorphous silicon films with low defect density on single crystal silicon comprising the steps of:
- providing a single crystal silicon substrate;
- depositing a buffer layer in a material capable of surviving a process temperature of 500° C. on top of said single crystal silicon substrate, said buffer layer having a thickness of at least 500 Å;
- and
- depositing an amorphous silicon film on a top surface of said buffer layer.
A semiconductor structure built on a single crystal silicon substrate comprising:
- a single crystal silicon substrate;
- a buffer layer on top of said single crystal silicon substrate formed of a material capable of surviving a process temperature of 500° C., said buffer layer having a thickness of at least 500 Å;
- and
- an amorphous silicon film having substantially no surface defect on top of said buffer layer.
Dependencies are inferred from the claim text.