Silicon-on-insulator wafer for RF integrated circuit
AssigneeHoneywell International Inc.
InventorsMohammed A. Fathimulla, Thomas Keyser
Life of this patent
Estimating the term…
Abstract
An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.
Claims31
An RF semiconductor device comprising:
- a high resistivity polysilicon handle wafer;
- a buried oxide layer over the polysilicon handle wafer;
- and,
- a silicon layer over the buried oxide layer.
The RF semiconductor device of claim 2 further comprising an RF input.
An RF semiconductor device comprising:
- a high resistivity polycrystalline layer;
- a buried oxide layer over the polycrystalline layer;
- and,
- a silicon layer over the buried oxide layer.
A method of fabricating an RF semiconductor device comprising:
- forming an oxide layer on a surface of a first wafer, wherein the first wafer comprises low resistivity silicon;
- and,
- bonding the oxide layer of the first wafer to a second wafer, wherein the second wafer comprises a high resistivity polysilicon wafer, whereby the RF semiconductor device is produced.
A method of fabricating an RF semiconductor device comprising:
- forming a first oxide layer on a surface of a first wafer, wherein the first wafer comprises a high resistivity polycrystalline material;
- forming a second oxide layer on a surface of a second wafer, wherein the second wafer comprises low resistivity silicon;
- and,
- bonding the first and second oxide layers against one another so as to produce the RF semiconductor device.
A method of fabricating an RF semiconductor device starting with a SOI wafer having a top silicon layer, a buried oxide layer, and a bottom silicon layer, the method comprising:
- forming a new oxide layer on a surface of the top silicon layer;
- forming a high resistivity polysilicon layer over the new oxide layer;
- removing the bottom silicon layer of the SOI wafer;
- and,
- removing the buried oxide layer of the SOI wafer so as to produce the RF semiconductor device.
Dependencies are inferred from the claim text.