EDMOS device having a lattice type drift region and method of manufacturing the same

A method of manufacturing an EDMOS device having a lattice type drift region, comprising the steps of:

• forming a well region in a given region of a silicon substrate;
• alternately implanting first impurity ions in a given region of said well region to form a lattice type drift region having a first lattice and a second lattice which are alternately arranged, wherein said first lattice is implanted by said first impurity ions;
• forming a field oxide film on a given region of said silicon substrate;
• implanting second impurity ions in said well region to control a threshold voltage;
• forming a gate insulating film and a polysilicon film on said silicon substrate of said well region, and then patterning said polysilicon film to form a gate electrode;
• implanting third impurity ions in said well region and said drift region to form a source region and a drain region, respectively;
• implanting fourth impurity ions in said well region to form a source contact region connected to said source region;
• forming an insulating film on an entire structure, and then forming contact holes in said insulating film to expose said source region, said drain region and said gate electrode;
• and
• forming metal wires connected to said source region, said drain region and said gate electrode via said contact holes, respectively.