Method for manufacturing non-volatile memory device

Abstract

A method of manufacturing a non-volatile memory device includes depositing a first layer on a semiconductor substrate, and a portion of the first layer is selectively removed to form a memory array area. A second layer is deposited on the memory array area and on adjacent areas of the semiconductor substrate contacting the memory array area. The second layer has a thickness that is substantially equal over the memory array area and over the adjacent areas. The method further includes forming a screening layer on the second layer on the adjacent areas except for outer peripheral portions thereof adjacent the memory array area. The thickness of the second layer exposed on the memory array area and on the outer peripheral portions of the adjacent areas is reduced so that a resulting thickness is less than a thickness of the first layer.

Dependencies are inferred from the claim text.