Method for fabricating flash memory
AssigneeMacronix International Co., Ltd.
InventorsPing-Yi Chang, Pei-Ren Jeng
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Abstract
A method for fabricating a flash memory is described. A stacked gate structure and a source/drain are formed on a substrate. An inter-layer dielectrics and a plurality of inter-metal dielectric layers are then formed over the substrate, wherein at least one layer among the inter-layer dielectrics and the inter-metal dielectric layers has a silicon carbide layer formed thereon. The silicon carbide layer is formed to protect the memory device from an UV irradiation, so as to prevent data errors occurring in the memory device.
Claims20
A method for fabricating a flash memory, comprising the steps of:
- forming a stacked gate structure and a source/drain on a substrate;
- forming an inter-layer dielectrics on the substrate;
- and
- forming a plurality of inter-metal dielectric layers on the substrate, wherein at least one layer among the inter-layer dielectrics and the inter-metal dielectric layers has a silicon carbide layer formed thereon.
A method for fabricating a flash memory, comprising the steps of:
- forming a stacked gate structure and a source/drain on a substrate;
- forming an inter-layer dielectrics on the substrate;
- and
- forming a silicon carbide layer on the inter-layer dielectrics.
A method for fabricating a flash memory, comprising the steps of:
- forming a stacked gate structure and a source/drain on a substrate;
- forming an inter-layer dielectrics on the substrate;
- forming a contact in the inter-layer dielectrics;
- forming a metal interconnection on the inter-layer dielectrics;
- forming an inter-metal dielectrics on the substrate;
- and
- forming a first silicon carbide layer on the inter-metal dielectrics.
Dependencies are inferred from the claim text.