Method for fabricating MIM capacitor
AssigneeHynix Semiconductor Inc.
InventorYi Sun Chung
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Abstract
Disclosed is a method for forming a MIM capacitor, the method comprising steps of: providing a semiconductor substrate formed with a base layer including a metallic pattern; depositing a first metallic layer to be used for a lower electrode on the base layer; depositing a first middle layer on the first metallic layer in order to improve the surface roughness of the first metallic layer and prevent oxidization thereof; depositing a dielectric layer with a high dielectric constant on the first middle layer; depositing a second middle layer on the dielectric layer in order to increase band gap energy; depositing a second metallic layer used for the upper electrode on the second middle layer; and completing the formation of the lower electrode by patterning the first metallic layer.
Claims7
A method for forming an MIM capacitor, the method comprising steps of:
- providing a semiconductor substrate formed with a base layer including a metallic pattern;
- depositing a first metallic layer to be used for a lower electrode on the base layer;
- depositing a first middle layer on the first metallic layer in order to improve the surface roughness of the first metallic layer and prevent oxidization thereof;
- depositing a dielectric layer with a high dielectric constant on the first middle layer;
- depositing a second middle layer on the dielectric layer in order to increase band gap energy;
- depositing a second metallic layer to be used for the upper electrode on the second middle layer;
- and,
- completing formation of the lower electrode by patterning the first metallic layer.
Dependencies are inferred from the claim text.