Method of fabricating discrete nrom cell by self aligned process

Abstract

A method of fabricating discrete NROM cell by self aligned process, comprising the steps of providing a substrate with already formed an ONO layer, wherein the ONO layer includes a top oxide layer, a nitride layer and a bottom oxide layer; defining the top oxide layer; defining a plurality of disposable spacers; implanting a bit line and pocket implant by self-aligned process; defining the nitride layer according to the disposable spacers; defining the bottom oxide layer according to the discrete nitride layer to form a plurality of discrete pillars, so that a channel is formed between two discrete pillars; forming a plurality of channel oxides in the channels; and forming an oxide layer over the discrete channel oxides and the nitrite layer. The method of fabricating discrete NROM cell according to the invention can solve the problem of the electrons being trapped in the nitride layer of NROM cell, and also control the implant and ONO structure at exactly mutual positions.

Dependencies are inferred from the claim text.