Oxime derivatives and the use thereof as latent acids
AssigneeCiba Specialty Chemicals Corporation
InventorsYamato Hitoshi, Toshikage Asakura, Akira Matsumoto, Masaki Ohwa
Life of this patent
Estimating the term…
Loading patent…
AssigneeCiba Specialty Chemicals Corporation
InventorsYamato Hitoshi, Toshikage Asakura, Akira Matsumoto, Masaki Ohwa
Estimating the term…
New oxime sulfonate compounds of the formula I, II, III, IV, V, VI and VII 1 2 R1 is for example C1-C18alkylsulfonyl, R2 is halogen or C1-C10haloalkyl; R3 is for example unsubstituted or substituted phenylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; Ar1 is for example a direct bond, C1-C12alkylene; —O—C—bond or a —0—Si-bond which cleaves upon the action of an acid; A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11 and A12 are for example a direct bond, —O—, or —S—, or are C1-C12alkylene or phenylene unsubstituted or substituted; Y1 is C1-C12alkylene which is for example substituted by OR4, or SR7; Y2 is e.g. a trivalent radical of C1-C12alkylene; Y3 is e.g. a tetravalent radical of C1-C12alkylene; X is halogen; Ar′1 is for example C1-C12alkyl which is unsubstituted or substituted; Ar″1 is for example phenylene; provided that at least one of the radicals Ar′1, Ar″1, is substituted by 1 to 3 groups of 3 is for example halogen; R15, R16, R17 and R18 e.g. hydrogen or phenyl; R19, R20, R21, R22 and R23 are e.g. phenyl; are especially suitable for the preparation of photoresists.
A chemically amplified photoresist composition comprising
Dependencies are inferred from the claim text.