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US 2004/0001913 A1Published application
Frequency uniformity of film bulk acoustic resonators
AssigneeIntel Corporation
InventorsLi-Peng Wang, Dong S. Shim, Qing Ma
Life of this patent
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Abstract
The frequency uniformity of a film bulk acoustic resonator may be improved by controlling the thickness across a wafer of one or more layers of the film bulk acoustic resonator. One or more layers of the film bulk acoustic resonator may be deposited in a way that irregularities in the deposition process from one die to another may be controlled.
Claims15
A method comprising:
- depositing material on a wafer to form a plurality of film bulk acoustic resonators;
- using a shutter to control the amount of material that is deposited across a wafer.
An apparatus to form a film bulk acoustic resonator comprising:
- a rotating chuck to mount a semiconductor wafer;
- a deposition source to deposit material on said wafer as it is rotated by said chuck;
- and
- a shutter to move along an axis between said wafer and said deposition source to control the amount of material that is deposited on said wafer.
1 more element
A method comprising:
- depositing a bottom electrode for a film bulk acoustic resonator on a wafer;
- depositing a piezoelectric film over said bottom electrode;
- measuring the thickness of said piezoelectric film;
- and
- forming a top electrode over said piezoelectric film by varying the amount of material that is deposited across said wafer.
2 more elements
Dependencies are inferred from the claim text.