Methods of fabricating magnetoresistive memory devices

A method of manufacturing a magnetoresistive memory device, the method comprising the following steps in the following order:

• (a) forming at least a first conductor for at least reading a magnetic memory element of the magnetoresistive memory device, the magnetic memory element for storing a bit state of the magnetoresistive memory device;
• (b) forming the magnetic memory element;
• (c) forming at least a second conductor for at least reading the magnetic memory element;
• (d) forming at least a third conductor for at least writing the magnetic memory element at one side of the magnetic memory element;
• and
• (e) forming at least a fourth conductor for at least writing the magnetic memory element at another side of the magnetic memory element that is opposite from the one side.

A method comprising:

• forming a subassembly of a magnetoresistive memory device, the subassembly including a magnetic memory element of the magnetoresistive memory device;
• inverting the subassembly;
• and
• forming at least a portion of the magnetoresistive memory device on the inverted subassembly, the portion including at least one conductor, the conductor being for at least one of reading and writing the memory device.

A method of manufacturing a magnetoresistive memory device, comprising:

• forming a first read line for at least reading a bit state of a magnetic memory element of the magnetoresistive memory device;
• after said forming the first read line, forming the magnetic memory element of the magnetoresistive device;
• after said forming the magnetic memory element, forming a second read line for at least reading the bit state of the magnetic memory element, the first read line being located at a first side of the magnetic memory element and the second read line being located at a second side of the magnetic memory element that is opposite from the first side;
• and
• after said forming the second read line, forming at the first side of the magnetic memory element at least one word line for at least writing the magnetic memory element.

A method of manufacturing a magnetoresistive memory device, comprising:

• a step for forming a magnetic memory element of the magnetoresistive device;
• a step for forming at least a first read line at a first side of the magnetic memory element for at least reading a bit state of the magnetic memory element, said step for forming the first read line being before said step for forming the magnetic memory element;
• after said step for forming the magnetic memory element, a step for forming a second read line at a second side of the magnetic memory element for at least reading the bit state of the magnetoresistive device;
• after said forming the second read line, a step for forming at least one word line located at the first side of the magnetic memory element.

A magnetoresistive memory device on a substrate, comprising:

• a magnetic memory element;
• a first conductor at least partially located at a first side of said magnetic memory element for at least reading a bit state of said magnetic memory element, said first side of said magnetic memory element facing in a direction toward said substrate;
• a second conductor at least partially located at a second side of said magnetic memory element for at least reading the bit state of said magnetic memory element;
• and
• a third conductor at least partially located at said first side of said magnetic memory element for at least writing said magnetic memory element, said third conductor having a face that faces in a direction toward said magnetic memory element, said face not including indications of a polishing process.

A method comprising:

• forming first read means for at least reading a bit state of magnetic memory means of a magnetoresistive memory device;
• after said forming the first read means, forming the magnetic memory means;
• after said forming the magnetic memory means, forming second read means for at least reading the bit state of the magnetic memory means, the first read means being located at a first side of the magnetic memory means and the second read means being located at a second side of the magnetic memory means;
• and
• after said forming the second read means, forming at the first side of the magnetic memory means at least one word means for at least writing the magnetic memory means.