Alignment marks of semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorDaisuke Inomata
Life of this patent
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Abstract
Alignment marks of a semiconductor device, formed prior to a step of applying heat treatment in an oxygen atmosphere, comprise an insulating film, a groove formed in the insulating film in the step of defining a contactor hole in a device part, a metal film formed at least on sidewalls of the groove in the step of burying the contactor hole in the device part, and a cover film formed on the insulating film, covering the metal film formed in the groove for prevention of oxidation of the metal film during heat treatment applied in an oxygen atmosphere.
Claims8
Alignment marks of a semiconductor device having a step of applying heat treatment in an oxygen atmosphere, comprising:
- an insulating film;
- a groove formed in the insulating film;
- metal formed in the groove;
- and
- a film formed on the insulating film, covering at least the metal for prevention of oxidation of the metal during heat treatment applied in an oxygen atmosphere.
Dependencies are inferred from the claim text.