Method and device for determining backgate characteristics
AssigneeSumitomo Electric Industires, Ltd.
InventorsMasashi Yamashita, Mitsutaka Tsubokura, Makoto Kiyama
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Abstract
Backgate-characteristics determination method and device that make for curtailing the fabrication of semiconductor circuit elements having defective backgate-characteristics. Initially a first C-V curve 30 representing the relation between a voltage applied to the obverse face of a wafer 20 serving as a substrate for semiconductor circuit elements, and its capacitance, is found. Next, a second C-V curve 32 is found through applying a voltage to the reverse face of the wafer 20. The backgate characteristics for the semiconductor circuit elements are determined based on a voltage-shift amount 34 for the wafer 20, found from the first C-V curve 30 and the second C-V curve 32.
Claims31
A backgate-characteristics determination method for determining backgate-effect characteristics for semiconductor circuit elements, the backgate-characteristics determination method comprising:
- a step of finding a first C-V characteristic indicating a relation between voltage obverse-facially applied to, and capacitance of, a wafer that is to be a semiconductor circuit-element substrate;
- a step of finding a second C-V characteristic of said wafer while reverse-facially applying a voltage to said wafer;
- and
- a step of determining backgate-effect characteristics for the semiconductor circuit elements by comparing the first C-V characteristic and the second CV characteristic of said wafer.
A backgate-characteristics determination device for determining backgate-effect characteristics for semiconductor circuit elements, the backgate-characteristics determination device comprising:
- a first power source for applying voltage obverse-facially to a wafer that is to be a semiconductor circuit-element substrate;
- a C-V gauge for measuring C-V characteristics representing a relation between voltage applied by the first power source and capacitance of said wafer;
- and
- a second power source for applying voltage reverse-facially to said wafer;
- wherein
- the C-V gauge measures a first C-V characteristic of said wafer in a state in which voltage is not applied by the second power source, and a second C-V characteristic of said wafer in a state in which voltage is applied by the second power source.
Dependencies are inferred from the claim text.