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US 2004/0000683 A1Published application
Circuit with buried strap including liner
AssigneeInfineon Technologies North America Corp.
InventorsVenkatachalam C. JaiPrakash, Rajiv Ranade
Life of this patent
Estimating the term…
Abstract
Semiconductor devices having trenches with buried straps therein preventing lateral out-diffusion of dopant are provided along with methods of fabricating such semiconductor devices.
Claims16
A semiconductor device comprising:
- a trench formed in a semiconductor substrate, the trench having a sidewall;
- a capacitor, the capacitor having a node dielectric lining a portion of the sidewall, a buried plate disposed in the semiconductor substrate adjacent to the node dielectric, and capacitor fill material including a dopant, the capacitor fill material being disposed within the trench;
- an insulator disposed over at least a part of the capacitor fill material;
- and
- a transistor, the transistor having a source, a gate disposed at least partly over the insulator and connected to the source, and a buried strap adjacent to the insulator and the capacitor fill material, the buried strap including a liner and a strap fill material, wherein the buried strap acts as a drain of the transistor and the liner reduces diffusion of the dopant in a direction substantially perpendicular to the sidewall while allowing diffusion of the dopant in a direction substantially parallel to the sidewall.
2 more elements
A semiconductor device comprising:
- a trench formed in a semiconductor substrate, the trench having a sidewall defining lower, middle and upper regions;
- a capacitor including a capacitor fill material comprising polysilicon and a dopant, the capacitor fill material being formed within the lower and middle regions of the trench;
- a transistor partly disposed within the upper region of the trench;
- an insulator disposed on top of the capacitor, the insulator being operable to provide isolation between the capacitor and the transistor;
- and
- a buried strap, the buried strap including a nitride liner and a strap fill material, wherein the buried strap is operable to function as a drain of the transistor and is operable to connect the transistor to the capacitor, and the nitride liner prevents diffusion of the dopant in a direction substantially perpendicular to the sidewall while allowing diffusion of the dopant in a direction substantially perpendicular to the sidewall.
3 more elements
A semiconductor device comprising:
- a trench formed in a semiconductor substrate, the trench having a sidewall;
- a capacitor including a capacitor fill material comprising polysilicon and a dopant, the capacitor fill material being formed within the trench;
- a transistor at least partly disposed within the upper region of the trench;
- an insulator disposed on top of the capacitor, the insulator being operable to provide isolation between the capacitor and the transistor;
- a buried strap including a liner and a strap fill material, the buried strap being operable to provide connectivity between the capacitor and the transistor;
- and
- a layer of epitaxial silicon disposed on the sidewall, the layer of epitaxial silicon being adjacent to the strap fill material and the insulator, wherein the layer of epitaxial silicon covers defects in the sidewall created during fabrication of the semiconductor device.
4 more elements
Dependencies are inferred from the claim text.