High mobility transistors in SOI and method for forming
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Xavier Baie, Randy W. Mann, Edward J. Nowak, Jed H. Rankin
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Abstract
The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been increased. The hole mobility is increased by applying physical straining to the silicon islands. By straining the silicon islands, the hole mobility is increased resulting in increased device gain. This is accomplished without requiring an increase in the size of the devices, or the size of the contacts to the devices.
Claims22
A method of forming a semiconductor device, the method comprising the steps of:
- providing a semiconductor wafer, the semiconductor wafer having an SOI layer and a buried insulator layer;
- patterning the semiconductor wafer to define at least a first SOI island and a second SOI island, the patterning forming a trench between first SOI island and the second SOI island;
- straining the first and second SOI islands;
- forming a conductive bridge in the trench;
- forming a first gate structure on the first SOI island, and a second gate structure on the second SOI island;
- and
- forming a source/drain implant between the first gate structure and the second gate structure, wherein the source/drain implant is formed extending across the conductive bridge between the first SOI island and the second SOI island.
A semiconductor structure comprising:
- an island of strained semiconductor material, the island having a top, sides and a bottom;
- a non-insulative material adjacent at least one of the sides of the island, the non-insulating material having a top;
- and
- a layer of conductive material overlaying a portion of the top of the island and a portion of the non-insulative material, and reacting therewith to form a conductive reaction product.
A semiconductor structure, the semiconductor structure comprising:
- a first silicon island and a second silicon island, and a trench between the first silicon island and the second silicon island.
- a first gate structure formed on the first silicon island;
- a second gate structure formed on the second silicon island;
- a conductive bridge formed in the trench between the first silicon island and the second silicon island;
- and
- a source/drain implant formed between the first gate structure and the second gate structure, the source/drain implant extending across the conductive bridge between the first silicon island and the second silicon island.
Dependencies are inferred from the claim text.