Fabrication method for semiconductor hole
AssigneeMacronix International Co., Ltd.
InventorTsung-Hsien Wu
Life of this patent
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Abstract
A fabrication method for a semiconductor hole is described. The method provides a circular or a elliptical hole pattern. A first exposure is performed with a first photomask that comprises a plurality of diagonally allocated square patterns wherein the square patterns on the first photomask are tilted at an angle of 45 degrees. Thereafter, a second exposure is performed using a second photomask, wherein patterns on the second photomask are mirror images to those on the second photomask to prevent the peeling of the photoresist at between the diagonally allocated hole patterns.
Claims24
A fabrication method for a semiconductor hole, the method is applicable in forming a plurality of holes in a photoresist layer, comprising:
- performing a first exposure process on the photoresist layer using a first photomask, wherein the first photomask comprises a plurality of first polygon patterns thereon, and each of the first polygon pattern is rotated a first fixed angle from a first arrayed position;
- performing a second exposure process on the photoresist layer using a second photomask, wherein the second photomask comprises a plurality of second polygon patterns thereon, each second polygon pattern is rotated a second fixed angle from a second arrayed position and is mirror imaged to the first polygon patterns;
- and
- performing a development process on the photoresist layer to form the holes.
An ion implantation process, comprising:
- forming a dielectric layer on a substrate;
- forming a photoresist layer on the dielectric layer;
- performing a first exposure using a first photomask that comprises a plurality of diagonally allocated first polygon patterns, wherein the first polygon patterns are rotated a first fixed angle from a first arrayed position;
- performing a second exposure using a first photomask that comprises a plurality of diagonally allocated second polygon patterns, wherein the second polygon patterns are rotated a second fixed angle from a second arrayed position and are mirror imaged to the first square patterns;
- performing a development process on the photoresist layer to forming a plurality of holes, wherein a portion of the dielectric layer is exposed;
- and
- performing an ion implantation process.
A method for forming a contact window, comprising:
- forming a dielectric layer on a substrate;
- forming a photoresist layer on the dielectric layer;
- performing a first exposure using a first photomask that comprises a plurality of diagonally allocated first polygon patterns, wherein the first polygon patterns are rotated a first fixed angle from a first arrayed position;
- performing a second exposure using a second photomask that comprises a plurality of diagonally allocated second polygon patterns, wherein the polygon square patterns are rotated a second fixed angle from a second arranged position and are mirror imaged to the first square patterns;
- performing a development process on the photoresist layer to form a plurality of contact holes, wherein a portion of the dielectric layer is exposed;
- and
- performing an etching process on the dielectric layer to form a plurality of contact windows using the photoresist layer that comprises the plurality of the contact windows as a mask.
A method for fabricating a semiconductor hole, which is applicable to forming a plurality of holes in a photoresist layer, comprising:
- applying a first photomask to perform a first exposure on the photoresist layer, wherein a pattern of the first photomask is a plurality of first square patterns, and each of the first square patterns rotates a first fixed angle from a first arrayed position;
- applying a second photomask to perform a second exposure on the photoresist layer, wherein second photomask comprises a plurality of diagonally allocated square patterns, wherein each of the second square patterns rotates a second fixed angle from a second arrayed position and is mirror imaged to the first square patterns;
- and
- performing a development process on the photoresist layer to form the holes.
Dependencies are inferred from the claim text.