Temperature-adjusted pre-charged reference for an integrated circuit 1T/1C ferroelectric memory
OwnerKurt S. Schwartzinventor
Life of this patent
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Abstract
A temperature-dependent reference works by pre-charging a standard linear CMOS or ferroelectric reference capacitor to a pre-charge voltage that is dependent on temperature. At cold temperatures the pre-charge voltage is higher, resulting in a larger voltage on the reference bit-line. At warm temperatures the pre-charge voltage is lower, resulting in a smaller voltage on the reference bit-line. Both the precise temperature slope and offset pre-charge voltage are selectable.
Claims20
A temperature-compensated reference circuit for an integrated circuit 1T/1C ferroelectric memory comprising:
- a reference capacitor;
- an active circuit for providing a negative voltage slope with respect to temperature;
- means for selectively coupling the reference circuit to the reference capacitor;
- and
- means for selectively coupling the reference capacitor to a bit line.
A method for providing a temperature-compensated reference circuit for an integrated circuit 1T/1C ferroelectric memory comprising:
- providing a reference capacitor;
- providing a negative voltage slope with respect to temperature;
- selectively coupling the reference circuit to the reference capacitor;
- and
- selectively coupling the reference capacitor to a bit line.
Dependencies are inferred from the claim text.