Computer-implemented reflectance system and method for non-destructive low dose ion implantation monitoring
Assigneen&k Technology, Inc.
InventorsJeff Roberts, Abdul Rahim Forouhi
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Assigneen&k Technology, Inc.
InventorsJeff Roberts, Abdul Rahim Forouhi
Estimating the term…
Embodied in a reflectance system capable of providing high resolution, repeatable, efficient, and accurate reflectance measurements of a silicon or silicon-oxide wafer at all wavelengths, the present invention, including an inventive and useful software tool with user interface, provides a solution to monitor non-destructively low dose ion implantation without potentially suffering from undesirable annealing effect. The computer-implemented method disclosed herein determines a reflectance change index that correlates to the ion dose. The reflectance change index is determined based on an absolute value of reflectance changes over the entire measured spectra. The reflectance changes are determined based on non-implanted and implanted reflectance measurements of the wafer respectively obtained at each of the wavelengths.
A computer-implemented reflectance method for non-destructive monitoring low dose ion implantation in a material, said method comprising the steps of:
A system for non-destructive monitoring low dose ion implantation in a material, comprising:
A computer program product embodied in a reflectance system for implementing a method for non-destructive monitoring low dose ion implantation in a first wafer, the reflectance system comprises a light source means for providing visible and invisible light on said wafer at a substantially broad range of wavelengths (wl) and an optical sensing means for obtaining non-implanted and implanted reflectance measurements of said wafer at each of said wavelengths, (Rref,wl) and (Rimp,wl), respectively, the computer program product comprising:
Dependencies are inferred from the claim text.