US 2003/0227045 A1 · Method of forming storage nodes comprising a base in a contact hole and related structures

Abstract

Methods of forming an electronic structure can include forming an interlayer insulating layer on a substrate, and forming a storage node comprising a base and sidewalls extending away from the base. The interlayer insulating layer can have a contact hole therein exposing a portion of the substrate. Moreover, the storage node base can be in the contact hole and the sidewalls can extend away from the base and away from the substrate with portions of the sidewalls being within the contact hole and with portions of the sidewalls extending outside the contact hole beyond the interlayer insulating layer away from the substrate. Related structures are also discussed.

Claims26

Dependent claims

An electronic structure comprising:

a substrate;
an interlayer insulating layer on the substrate, the interlayer insulating layer having a contact hole therein exposing a portion of the substrate;
a storage node comprising a base and sidewalls extending away from the base wherein the base is in the contact hole and wherein the sidewalls extend away from the base and away from the substrate with portions of the sidewalls being within the contact hole and with portions of the sidewalls extending outside the contact hole beyond the interlayer insulating layer away from the substrate;
and
an insulating sidewall layer on sidewalls of the contact hole between the storage node and the interlayer insulating layer wherein the insulating sidewall layer and the interlayer insulating layer comprise different materials.

2 more elements

A method of forming storage nodes, the method comprising the steps of:

forming a transistor on a predetermined portion of a semiconductor substrate;
forming a source contact pattern and a drain contact pattern connected to a source and a drain of the transistor, respectively;
forming an interlayer insulating layer on an entire surface of the substrate in which the source contact pattern and the drain contact pattern are formed;
forming storage node plugs passing through the interlayer insulating layer and connected to the source contact pattern;
forming a mold layer on an entire surface of the resulting structure in which the storage node plugs are formed;
patterning the mold layer to form storage node holes exposing the storage node plugs;
etching part of at least upper portion of the storage node plugs using the mold layer with the storage node holes as an etching mask;
forming storage nodes extended to a predetermined depth of the contact holes, the storage nodes covering sidewalls of the storage node holes;
and
removing the mold layer to expose outer walls of the storage nodes.

7 more elements

Dependencies are inferred from the claim text.

Method of forming storage nodes comprising a base in a contact hole and related structures

Life of this patent

Method of forming storage nodes comprising a base in a contact hole and related structures

Life of this patent

Abstract

Claims26