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US 2003/0227013 A1Published application
Dual-channel CMOS transistors with differentially strained channels
AssigneeAmberWave Systems Corporation
InventorsMatthew T. Currie, Anthony J. Lochtefeld, Eugene A. Fitzgerald
Life of this patent
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Abstract
A semiconductor structure having a substrate with a surface layer including strained silicon. The surface layer has a first region with a first thickness less than a second thickness of a second region. A gate dielectric layer is disposed over a portion of at least the first surface layer region.
Claims34
A semiconductor structure comprising:
- a surface layer comprising strained silicon disposed over a substrate, the surface layer including a first region having a first thickness and a second region having a second thickness, the first thickness being less than the second thickness;
- and
- a gate dielectric layer disposed over a portion of at least the first region of the surface layer.
A semiconductor structure comprising:
- a surface layer comprising strained silicon disposed over a substrate, wherein a portion of the surface layer has a minimum thickness necessary for growing a silicon dioxide layer having satisfactory integrity.
A semiconductor structure comprising:
- a surface layer comprising strained silicon disposed over a substrate, the surface layer including a first region having a first thickness and a second region having a second thickness, the first thickness being less than the second thickness;
- a first source and a first drain in the first region, the first source and the first drain including a first type of dopant;
- and
- a second source and a second drain in the second region, the second source and the second drain including a second type of dopant.
1 more element
A method for forming a semiconductor structure, the method comprising the steps of:
- providing a substrate having a surface layer disposed thereon, the surface layer comprising strained silicon;
- selectively forming a sacrificial layer in a portion of the surface layer;
- and
- substantially removing the sacrificial layer to define a first region of the surface layer having a first thickness proximate a second region of the surface layer having a second thickness, wherein the first thickness is less than the second thickness.
1 more element
Dependencies are inferred from the claim text.