Three-terminal avalanche photodiode
AssigneeCorning Lasertron, Inc.
InventorWilliam R. Clark
Life of this patent
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Abstract
An avalanche photodiode (APD) includes an absorption layer above the multiplication layer, where the thickness of the multiplication layer is defined through a growth process. The APD can also have a third-terminal, or peripheral ring terminal, for collecting charge carriers generated outside the optically-active region of the device. Undesirable dark current can thus be better managed during the life of the device. The three-terminal design may also be utilized in other photodetectors, including PIN diodes.
Claims35
An avalanche photodiode comprising:
- a substrate including a first semiconductor material;
- a multiplication layer above the substrate, the multiplication layer having an undoped region of a second semiconductor material;
- a dose layer over the multiplication layer, the dose layer having a doped region of a third semiconductor material;
- an absorbing layer that receives incident photons and generates charge carriers, the absorbing layer above the dose layer and having an undoped region of a fourth semiconductor material;
- and
- at least two electrical contacts that apply a voltage across the photodiode.
A photodiode device comprising:
- a semiconductor structure having an active region of a semiconductor material that receives incident light and generates charge carriers in response to the incident light;
- a contact layer of a semiconductor material located above the active region, the contact layer comprising a central region and a peripheral region, the peripheral region separate from, and concentrically surrounding the central region.
A method of fabricating an avalanche photodiode comprising:
- providing a substrate layer of a first semiconductor material;
- forming a multiplication layer of a second semiconductor material over the substrate;
- forming a doped dose layer of a third semiconductor material over the multiplication layer;
- and
- forming a light absorbing layer of a fourth semiconductor material over the dose layer.
A method of fabricating a photodiode device comprising:
- providing a semiconductor structure having an active region of a semiconductor material that receives incident light and generates charge carriers in response to the incident light;
- forming a contact layer of a semiconductor material over the active region;
- and
- removing a portion of the contact layer to provide a central region and a peripheral region of the contact layer, the peripheral region separate from, and concentrically surrounding the central region.
Dependencies are inferred from the claim text.