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US 2003/0226499 A1Published application
Method for producing a positively doped semiconductor with large forbidden band
OwnerFerechteh Hosseini Teheraniinventor
Life of this patent
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Abstract
A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
Claims4
1) A method of producing a p doped wide bandgap semiconductor comprising growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
Dependencies are inferred from the claim text.