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US 2003/0226497 A1Published application
Method for producing powders made of gallium nitride and apparatus for producing the same
AssigneeTokyo Institute of Technology
InventorKazuhiko Hara
Life of this patent
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Abstract
In a creation section of GaN crystal nuclei, a gallium vapor and an ammonia gas are chemically reacted to create GaN crystal nuclei, which are transported into a growth section of GaN powders with a nitrogen carrier gas. In the growth section of GaN powders, a gallium chloride created in a pre-reactor is chemically reacted with the ammonia gas transported from the creation section of GaN crystal nuclei on the GaN crystal nuclei, to produce GaN powders through the crystal growth.
Claims19
A method for producing powders made of gallium nitride, comprising:
- a creation step of crystal nuclei wherein crystal nuclei made of gallium nitride are created, and
- a growth step of powders wherein crystals made of gallium nitride are grown from said crystal nuclei of gallium nitride through a chemical reaction between a gallium halide and an ammonia gas on said crystal nuclei of gallium nitride, to produce said gallium nitride powders,
- said growth step of powders being continued from said creation step of crystal nuclei in period of time.
An apparatus for producing powders made of gallium nitride comprising:
- a creating means of crystal nuclei to create crystal nuclei made of gallium nitride, and
- a growing means of powders to grow crystals made of gallium nitride from said crystal nuclei of gallium nitride through a chemical reaction between a gallium halide and an ammonia gas on said crystal nuclei of gallium nitride, to produce said gallium nitride powders.
Dependencies are inferred from the claim text.