Method for making extreme ultraviolet lithography structures

A method for forming a glass substrate with void spaces, comprising:

• forming a slurry comprising Ti doped silica soot and H2O, said doped silica soot having a silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2;
• providing a glass substrate casting mold including therein a casting form, the casting form adapted to provide selected geometry void spaces within the glass substrate, inserting the Ti doped silica soot and H2O slurry into the casting mold;
• drying the Ti doped silica soot and H2O slurry to form a green ware Ti doped silica substrate;
• removing the casting form;
• and
• consolidating the green ware into a consolidated glass substrate with void spaces, said consolidated glass having a homogeneous titanium silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2 and a homogeneous CTE is in the range of +30 ppb/° C. to −30 ppb/° C. at 20-26° C.

A method for forming a lithography structure with void spaces, comprising:

• forming a slurry comprising Ti doped silica soot and H2O, said doped silica soot having a silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2;
• providing a lithography structure glass substrate casting mold including therein a casting form, the casting form adapted to provide selected geometry void spaces within the lithography structure;
• inserting the Ti doped silica soot and H2O slurry into the casting mold;
• drying the Ti doped silica soot and H2O slurry to form a green ware Ti doped silica substrate lithography structure;
• removing the casting form;
• and
• consolidating the green ware into a consolidated glass lithography structure with void spaces, said consolidated glass having a homogeneous titanium silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2 and a homogeneous CTE is in the range of +30 ppb/° C. to −30 ppb/° C. at 20-26° C.

A method for forming an EUV lithography glass substrate, comprising:

• forming a mixture comprising titanium doped silica glass particles;
• providing a casting mold including therein a casting form, the casting form adapted to provide selected geometry void spaces within the EUV lithography glass substrate,
• inserting the titanium doped silica glass particle mixture into the casting mold;
• drying the mixture to form a green ware EUV lithography substrate;
• removing the casting form;
• and
• consolidating the green ware into a consolidated glass EUV lithography substrate having a homogeneous titanium silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2 and a homogeneous CTE in the range of +30 ppb/° C. to −30 ppb/° C. at 20-26° C.

A method for forming a glass substrate with void spaces, comprising:

• forming a mixture comprising Ti doped silica particles, said doped silica having a silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2;
• providing a glass substrate casting mold including therein a casting form, the casting form adapted to provide selected geometry void spaces within the glass substrate, inserting the Ti doped silica mixture into the casting mold;
• drying the Ti doped silica mixture to form a green ware Ti doped silica substrate;
• removing the casting form;
• and
• consolidating the green ware into a consolidated glass substrate with void spaces, said consolidated glass having a homogeneous titanium silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2 and a homogeneous CTE is in the range of +30 ppb/° C. to −30 ppb/° C. at 20-26° C.

A method for forming a lithography structure with void spaces, comprising:

• forming a mixture comprising Ti doped silica particles, said doped silica having a silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2;
• providing a lithography structure glass substrate casting mold including therein a casting form, the casting form adapted to provide selected geometry void spaces within the lithography structure;
• inserting the Ti doped silica particles into the casting mold;
• drying the Ti doped silica particles to form a green ware Ti doped silica substrate lithography structure;
• removing the casting form;
• and
• consolidating the green ware into a consolidated glass lithography structure with void spaces, said consolidated glass having a homogeneous titanium silica glass dopant level in the range from 6 wt. % TiO2 to about 9 wt. % TiO2 and a homogeneous CTE is in the range of +30 ppb/° C. to −30 ppb/° C. at 20-26° C.